| PART |
Description |
Maker |
| IGC136T170S8RH2 |
low switching losses and saturation losses
|
Infineon Technologies A...
|
| HYG75P120D1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG15P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| IRG7PH35UD1PBF IRG7PH35UD1PBF-15 |
Low Switching Losses
|
International Rectifier
|
| IRGB4060DPBF IRGB4060DPBF-15 |
Low Switching Losses
|
International Rectifier
|
| STF25N60M2-EP |
Very low turn-off switching losses
|
STMicroelectronics
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| MKP1839 |
C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
|
Vishay
|
| SPN02N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
